Rewrite of NAND code based on what is in 2.6.12 Linux kernel
Patch by Ladislav Michl, 29 Jun 2005
diff --git a/include/linux/mtd/compat.h b/include/linux/mtd/compat.h
new file mode 100644
index 0000000..460cd45
--- /dev/null
+++ b/include/linux/mtd/compat.h
@@ -0,0 +1,44 @@
+#ifndef _LINUX_COMPAT_H_
+#define _LINUX_COMPAT_H_
+
+#define __user
+#define __iomem
+
+#define ndelay(x) udelay(1)
+
+#define printk printf
+
+#define KERN_EMERG
+#define KERN_ALERT
+#define KERN_CRIT
+#define KERN_ERR
+#define KERN_WARNING
+#define KERN_NOTICE
+#define KERN_INFO
+#define KERN_DEBUG
+
+#define kmalloc(size, flags) malloc(size)
+#define kfree(ptr) free(ptr)
+
+/*
+ * ..and if you can't take the strict
+ * types, you can specify one yourself.
+ *
+ * Or not use min/max at all, of course.
+ */
+#define min_t(type,x,y) \
+ ({ type __x = (x); type __y = (y); __x < __y ? __x: __y; })
+#define max_t(type,x,y) \
+ ({ type __x = (x); type __y = (y); __x > __y ? __x: __y; })
+
+#define BUG() do { \
+ printf("U-Boot BUG at %s:%d!\n", __FILE__, __LINE__); \
+} while (0)
+
+#define BUG_ON(condition) do { if (condition) BUG(); } while(0)
+
+#define likely(x) __builtin_expect(!!(x), 1)
+#define unlikely(x) __builtin_expect(!!(x), 0)
+
+#define PAGE_SIZE 4096
+#endif
diff --git a/include/linux/mtd/mtd-abi.h b/include/linux/mtd/mtd-abi.h
new file mode 100644
index 0000000..afe96b5
--- /dev/null
+++ b/include/linux/mtd/mtd-abi.h
@@ -0,0 +1,99 @@
+/*
+ * $Id: mtd-abi.h,v 1.7 2004/11/23 15:37:32 gleixner Exp $
+ *
+ * Portions of MTD ABI definition which are shared by kernel and user space
+ */
+
+#ifndef __MTD_ABI_H__
+#define __MTD_ABI_H__
+
+struct erase_info_user {
+ uint32_t start;
+ uint32_t length;
+};
+
+struct mtd_oob_buf {
+ uint32_t start;
+ uint32_t length;
+ unsigned char *ptr;
+};
+
+#define MTD_ABSENT 0
+#define MTD_RAM 1
+#define MTD_ROM 2
+#define MTD_NORFLASH 3
+#define MTD_NANDFLASH 4
+#define MTD_PEROM 5
+#define MTD_OTHER 14
+#define MTD_UNKNOWN 15
+
+#define MTD_CLEAR_BITS 1 // Bits can be cleared (flash)
+#define MTD_SET_BITS 2 // Bits can be set
+#define MTD_ERASEABLE 4 // Has an erase function
+#define MTD_WRITEB_WRITEABLE 8 // Direct IO is possible
+#define MTD_VOLATILE 16 // Set for RAMs
+#define MTD_XIP 32 // eXecute-In-Place possible
+#define MTD_OOB 64 // Out-of-band data (NAND flash)
+#define MTD_ECC 128 // Device capable of automatic ECC
+#define MTD_NO_VIRTBLOCKS 256 // Virtual blocks not allowed
+
+// Some common devices / combinations of capabilities
+#define MTD_CAP_ROM 0
+#define MTD_CAP_RAM (MTD_CLEAR_BITS|MTD_SET_BITS|MTD_WRITEB_WRITEABLE)
+#define MTD_CAP_NORFLASH (MTD_CLEAR_BITS|MTD_ERASEABLE)
+#define MTD_CAP_NANDFLASH (MTD_CLEAR_BITS|MTD_ERASEABLE|MTD_OOB)
+#define MTD_WRITEABLE (MTD_CLEAR_BITS|MTD_SET_BITS)
+
+
+// Types of automatic ECC/Checksum available
+#define MTD_ECC_NONE 0 // No automatic ECC available
+#define MTD_ECC_RS_DiskOnChip 1 // Automatic ECC on DiskOnChip
+#define MTD_ECC_SW 2 // SW ECC for Toshiba & Samsung devices
+
+/* ECC byte placement */
+#define MTD_NANDECC_OFF 0 // Switch off ECC (Not recommended)
+#define MTD_NANDECC_PLACE 1 // Use the given placement in the structure (YAFFS1 legacy mode)
+#define MTD_NANDECC_AUTOPLACE 2 // Use the default placement scheme
+#define MTD_NANDECC_PLACEONLY 3 // Use the given placement in the structure (Do not store ecc result on read)
+#define MTD_NANDECC_AUTOPL_USR 4 // Use the given autoplacement scheme rather than using the default
+
+struct mtd_info_user {
+ uint8_t type;
+ uint32_t flags;
+ uint32_t size; // Total size of the MTD
+ uint32_t erasesize;
+ uint32_t oobblock; // Size of OOB blocks (e.g. 512)
+ uint32_t oobsize; // Amount of OOB data per block (e.g. 16)
+ uint32_t ecctype;
+ uint32_t eccsize;
+};
+
+struct region_info_user {
+ uint32_t offset; /* At which this region starts,
+ * from the beginning of the MTD */
+ uint32_t erasesize; /* For this region */
+ uint32_t numblocks; /* Number of blocks in this region */
+ uint32_t regionindex;
+};
+
+#define MEMGETINFO _IOR('M', 1, struct mtd_info_user)
+#define MEMERASE _IOW('M', 2, struct erase_info_user)
+#define MEMWRITEOOB _IOWR('M', 3, struct mtd_oob_buf)
+#define MEMREADOOB _IOWR('M', 4, struct mtd_oob_buf)
+#define MEMLOCK _IOW('M', 5, struct erase_info_user)
+#define MEMUNLOCK _IOW('M', 6, struct erase_info_user)
+#define MEMGETREGIONCOUNT _IOR('M', 7, int)
+#define MEMGETREGIONINFO _IOWR('M', 8, struct region_info_user)
+#define MEMSETOOBSEL _IOW('M', 9, struct nand_oobinfo)
+#define MEMGETOOBSEL _IOR('M', 10, struct nand_oobinfo)
+#define MEMGETBADBLOCK _IOW('M', 11, loff_t)
+#define MEMSETBADBLOCK _IOW('M', 12, loff_t)
+
+struct nand_oobinfo {
+ uint32_t useecc;
+ uint32_t eccbytes;
+ uint32_t oobfree[8][2];
+ uint32_t eccpos[32];
+};
+
+#endif /* __MTD_ABI_H__ */
diff --git a/include/linux/mtd/mtd.h b/include/linux/mtd/mtd.h
new file mode 100644
index 0000000..9ef4cce
--- /dev/null
+++ b/include/linux/mtd/mtd.h
@@ -0,0 +1,214 @@
+/*
+ * $Id: mtd.h,v 1.56 2004/08/09 18:46:04 dmarlin Exp $
+ *
+ * Copyright (C) 1999-2003 David Woodhouse <dwmw2@infradead.org> et al.
+ *
+ * Released under GPL
+ */
+
+#ifndef __MTD_MTD_H__
+#define __MTD_MTD_H__
+#include <linux/types.h>
+#include <linux/mtd/mtd-abi.h>
+
+#define MAX_MTD_DEVICES 16
+
+#define MTD_ERASE_PENDING 0x01
+#define MTD_ERASING 0x02
+#define MTD_ERASE_SUSPEND 0x04
+#define MTD_ERASE_DONE 0x08
+#define MTD_ERASE_FAILED 0x10
+
+/* If the erase fails, fail_addr might indicate exactly which block failed. If
+ fail_addr = 0xffffffff, the failure was not at the device level or was not
+ specific to any particular block. */
+struct erase_info {
+ struct mtd_info *mtd;
+ u_int32_t addr;
+ u_int32_t len;
+ u_int32_t fail_addr;
+ u_long time;
+ u_long retries;
+ u_int dev;
+ u_int cell;
+ void (*callback) (struct erase_info *self);
+ u_long priv;
+ u_char state;
+ struct erase_info *next;
+};
+
+struct mtd_erase_region_info {
+ u_int32_t offset; /* At which this region starts, from the beginning of the MTD */
+ u_int32_t erasesize; /* For this region */
+ u_int32_t numblocks; /* Number of blocks of erasesize in this region */
+};
+
+struct mtd_info {
+ u_char type;
+ u_int32_t flags;
+ u_int32_t size; // Total size of the MTD
+
+ /* "Major" erase size for the device. Naïve users may take this
+ * to be the only erase size available, or may use the more detailed
+ * information below if they desire
+ */
+ u_int32_t erasesize;
+
+ u_int32_t oobblock; // Size of OOB blocks (e.g. 512)
+ u_int32_t oobsize; // Amount of OOB data per block (e.g. 16)
+ u_int32_t oobavail; // Number of bytes in OOB area available for fs
+ u_int32_t ecctype;
+ u_int32_t eccsize;
+
+
+ // Kernel-only stuff starts here.
+ char *name;
+ int index;
+
+ // oobinfo is a nand_oobinfo structure, which can be set by iotcl (MEMSETOOBINFO)
+ struct nand_oobinfo oobinfo;
+
+ /* Data for variable erase regions. If numeraseregions is zero,
+ * it means that the whole device has erasesize as given above.
+ */
+ int numeraseregions;
+ struct mtd_erase_region_info *eraseregions;
+
+ /* This really shouldn't be here. It can go away in 2.5 */
+ u_int32_t bank_size;
+
+ int (*erase) (struct mtd_info *mtd, struct erase_info *instr);
+
+ /* This stuff for eXecute-In-Place */
+ int (*point) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char **mtdbuf);
+
+ /* We probably shouldn't allow XIP if the unpoint isn't a NULL */
+ void (*unpoint) (struct mtd_info *mtd, u_char * addr, loff_t from, size_t len);
+
+
+ int (*read) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char *buf);
+ int (*write) (struct mtd_info *mtd, loff_t to, size_t len, size_t *retlen, const u_char *buf);
+
+ int (*read_ecc) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char *buf, u_char *eccbuf, struct nand_oobinfo *oobsel);
+ int (*write_ecc) (struct mtd_info *mtd, loff_t to, size_t len, size_t *retlen, const u_char *buf, u_char *eccbuf, struct nand_oobinfo *oobsel);
+
+ int (*read_oob) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char *buf);
+ int (*write_oob) (struct mtd_info *mtd, loff_t to, size_t len, size_t *retlen, const u_char *buf);
+
+ /*
+ * Methods to access the protection register area, present in some
+ * flash devices. The user data is one time programmable but the
+ * factory data is read only.
+ */
+ int (*read_user_prot_reg) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char *buf);
+
+ int (*read_fact_prot_reg) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char *buf);
+
+ /* This function is not yet implemented */
+ int (*write_user_prot_reg) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char *buf);
+#if 0
+ /* kvec-based read/write methods. We need these especially for NAND flash,
+ with its limited number of write cycles per erase.
+ NB: The 'count' parameter is the number of _vectors_, each of
+ which contains an (ofs, len) tuple.
+ */
+ int (*readv) (struct mtd_info *mtd, struct kvec *vecs, unsigned long count, loff_t from, size_t *retlen);
+ int (*readv_ecc) (struct mtd_info *mtd, struct kvec *vecs, unsigned long count, loff_t from,
+ size_t *retlen, u_char *eccbuf, struct nand_oobinfo *oobsel);
+ int (*writev) (struct mtd_info *mtd, const struct kvec *vecs, unsigned long count, loff_t to, size_t *retlen);
+ int (*writev_ecc) (struct mtd_info *mtd, const struct kvec *vecs, unsigned long count, loff_t to,
+ size_t *retlen, u_char *eccbuf, struct nand_oobinfo *oobsel);
+#endif
+ /* Sync */
+ void (*sync) (struct mtd_info *mtd);
+#if 0
+ /* Chip-supported device locking */
+ int (*lock) (struct mtd_info *mtd, loff_t ofs, size_t len);
+ int (*unlock) (struct mtd_info *mtd, loff_t ofs, size_t len);
+
+ /* Power Management functions */
+ int (*suspend) (struct mtd_info *mtd);
+ void (*resume) (struct mtd_info *mtd);
+#endif
+ /* Bad block management functions */
+ int (*block_isbad) (struct mtd_info *mtd, loff_t ofs);
+ int (*block_markbad) (struct mtd_info *mtd, loff_t ofs);
+
+ void *priv;
+
+ struct module *owner;
+ int usecount;
+};
+
+
+ /* Kernel-side ioctl definitions */
+
+extern int add_mtd_device(struct mtd_info *mtd);
+extern int del_mtd_device (struct mtd_info *mtd);
+
+extern struct mtd_info *get_mtd_device(struct mtd_info *mtd, int num);
+
+extern void put_mtd_device(struct mtd_info *mtd);
+
+#if 0
+struct mtd_notifier {
+ void (*add)(struct mtd_info *mtd);
+ void (*remove)(struct mtd_info *mtd);
+ struct list_head list;
+};
+
+
+extern void register_mtd_user (struct mtd_notifier *new);
+extern int unregister_mtd_user (struct mtd_notifier *old);
+
+int default_mtd_writev(struct mtd_info *mtd, const struct kvec *vecs,
+ unsigned long count, loff_t to, size_t *retlen);
+
+int default_mtd_readv(struct mtd_info *mtd, struct kvec *vecs,
+ unsigned long count, loff_t from, size_t *retlen);
+#endif
+
+#define MTD_ERASE(mtd, args...) (*(mtd->erase))(mtd, args)
+#define MTD_POINT(mtd, a,b,c,d) (*(mtd->point))(mtd, a,b,c, (u_char **)(d))
+#define MTD_UNPOINT(mtd, arg) (*(mtd->unpoint))(mtd, (u_char *)arg)
+#define MTD_READ(mtd, args...) (*(mtd->read))(mtd, args)
+#define MTD_WRITE(mtd, args...) (*(mtd->write))(mtd, args)
+#define MTD_READV(mtd, args...) (*(mtd->readv))(mtd, args)
+#define MTD_WRITEV(mtd, args...) (*(mtd->writev))(mtd, args)
+#define MTD_READECC(mtd, args...) (*(mtd->read_ecc))(mtd, args)
+#define MTD_WRITEECC(mtd, args...) (*(mtd->write_ecc))(mtd, args)
+#define MTD_READOOB(mtd, args...) (*(mtd->read_oob))(mtd, args)
+#define MTD_WRITEOOB(mtd, args...) (*(mtd->write_oob))(mtd, args)
+#define MTD_SYNC(mtd) do { if (mtd->sync) (*(mtd->sync))(mtd); } while (0)
+
+
+#ifdef CONFIG_MTD_PARTITIONS
+void mtd_erase_callback(struct erase_info *instr);
+#else
+static inline void mtd_erase_callback(struct erase_info *instr)
+{
+ if (instr->callback)
+ instr->callback(instr);
+}
+#endif
+
+/*
+ * Debugging macro and defines
+ */
+#define MTD_DEBUG_LEVEL0 (0) /* Quiet */
+#define MTD_DEBUG_LEVEL1 (1) /* Audible */
+#define MTD_DEBUG_LEVEL2 (2) /* Loud */
+#define MTD_DEBUG_LEVEL3 (3) /* Noisy */
+
+#ifdef CONFIG_MTD_DEBUG
+#define DEBUG(n, args...) \
+ do { \
+ if (n <= CONFIG_MTD_DEBUG_VERBOSE) \
+ printk(KERN_INFO args); \
+ } while(0)
+#else /* CONFIG_MTD_DEBUG */
+#define DEBUG(n, args...) do { } while(0)
+
+#endif /* CONFIG_MTD_DEBUG */
+
+#endif /* __MTD_MTD_H__ */
diff --git a/include/linux/mtd/nand.h b/include/linux/mtd/nand.h
index 5236904..9a0108f 100644
--- a/include/linux/mtd/nand.h
+++ b/include/linux/mtd/nand.h
@@ -2,10 +2,10 @@
* linux/include/linux/mtd/nand.h
*
* Copyright (c) 2000 David Woodhouse <dwmw2@mvhi.com>
- * Steven J. Hill <sjhill@cotw.com>
- * Thomas Gleixner <gleixner@autronix.de>
+ * Steven J. Hill <sjhill@realitydiluted.com>
+ * Thomas Gleixner <tglx@linutronix.de>
*
- * $Id: nand.h,v 1.7 2003/07/24 23:30:46 a0384864 Exp $
+ * $Id: nand.h,v 1.68 2004/11/12 10:40:37 gleixner Exp $
*
* This program is free software; you can redistribute it and/or modify
* it under the terms of the GNU General Public License version 2 as
@@ -24,7 +24,7 @@
* bat later if I did something naughty.
* 10-11-2000 SJH Added private NAND flash structure for driver
* 10-24-2000 SJH Added prototype for 'nand_scan' function
- * 10-29-2001 TG changed nand_chip structure to support
+ * 10-29-2001 TG changed nand_chip structure to support
* hardwarespecific function for accessing control lines
* 02-21-2002 TG added support for different read/write adress and
* ready/busy line access function
@@ -32,10 +32,68 @@
* command delay times for different chips
* 04-28-2002 TG OOB config defines moved from nand.c to avoid duplicate
* defines in jffs2/wbuf.c
+ * 08-07-2002 TG forced bad block location to byte 5 of OOB, even if
+ * CONFIG_MTD_NAND_ECC_JFFS2 is not set
+ * 08-10-2002 TG extensions to nand_chip structure to support HW-ECC
+ *
+ * 08-29-2002 tglx nand_chip structure: data_poi for selecting
+ * internal / fs-driver buffer
+ * support for 6byte/512byte hardware ECC
+ * read_ecc, write_ecc extended for different oob-layout
+ * oob layout selections: NAND_NONE_OOB, NAND_JFFS2_OOB,
+ * NAND_YAFFS_OOB
+ * 11-25-2002 tglx Added Manufacturer code FUJITSU, NATIONAL
+ * Split manufacturer and device ID structures
+ *
+ * 02-08-2004 tglx added option field to nand structure for chip anomalities
+ * 05-25-2004 tglx added bad block table support, ST-MICRO manufacturer id
+ * update of nand_chip structure description
*/
#ifndef __LINUX_MTD_NAND_H
#define __LINUX_MTD_NAND_H
+#include <linux/mtd/compat.h>
+#include <linux/mtd/mtd.h>
+
+struct mtd_info;
+/* Scan and identify a NAND device */
+extern int nand_scan (struct mtd_info *mtd, int max_chips);
+/* Free resources held by the NAND device */
+extern void nand_release (struct mtd_info *mtd);
+
+/* Read raw data from the device without ECC */
+extern int nand_read_raw (struct mtd_info *mtd, uint8_t *buf, loff_t from, size_t len, size_t ooblen);
+
+
+/* The maximum number of NAND chips in an array */
+#define NAND_MAX_CHIPS 8
+
+/* This constant declares the max. oobsize / page, which
+ * is supported now. If you add a chip with bigger oobsize/page
+ * adjust this accordingly.
+ */
+#define NAND_MAX_OOBSIZE 64
+
+/*
+ * Constants for hardware specific CLE/ALE/NCE function
+*/
+/* Select the chip by setting nCE to low */
+#define NAND_CTL_SETNCE 1
+/* Deselect the chip by setting nCE to high */
+#define NAND_CTL_CLRNCE 2
+/* Select the command latch by setting CLE to high */
+#define NAND_CTL_SETCLE 3
+/* Deselect the command latch by setting CLE to low */
+#define NAND_CTL_CLRCLE 4
+/* Select the address latch by setting ALE to high */
+#define NAND_CTL_SETALE 5
+/* Deselect the address latch by setting ALE to low */
+#define NAND_CTL_CLRALE 6
+/* Set write protection by setting WP to high. Not used! */
+#define NAND_CTL_SETWP 7
+/* Clear write protection by setting WP to low. Not used! */
+#define NAND_CTL_CLRWP 8
+
/*
* Standard NAND flash commands
*/
@@ -45,12 +103,104 @@
#define NAND_CMD_READOOB 0x50
#define NAND_CMD_ERASE1 0x60
#define NAND_CMD_STATUS 0x70
+#define NAND_CMD_STATUS_MULTI 0x71
#define NAND_CMD_SEQIN 0x80
#define NAND_CMD_READID 0x90
#define NAND_CMD_ERASE2 0xd0
#define NAND_CMD_RESET 0xff
+/* Extended commands for large page devices */
+#define NAND_CMD_READSTART 0x30
+#define NAND_CMD_CACHEDPROG 0x15
+
+/* Status bits */
+#define NAND_STATUS_FAIL 0x01
+#define NAND_STATUS_FAIL_N1 0x02
+#define NAND_STATUS_TRUE_READY 0x20
+#define NAND_STATUS_READY 0x40
+#define NAND_STATUS_WP 0x80
+
+/*
+ * Constants for ECC_MODES
+ */
+
+/* No ECC. Usage is not recommended ! */
+#define NAND_ECC_NONE 0
+/* Software ECC 3 byte ECC per 256 Byte data */
+#define NAND_ECC_SOFT 1
+/* Hardware ECC 3 byte ECC per 256 Byte data */
+#define NAND_ECC_HW3_256 2
+/* Hardware ECC 3 byte ECC per 512 Byte data */
+#define NAND_ECC_HW3_512 3
+/* Hardware ECC 3 byte ECC per 512 Byte data */
+#define NAND_ECC_HW6_512 4
+/* Hardware ECC 8 byte ECC per 512 Byte data */
+#define NAND_ECC_HW8_512 6
+/* Hardware ECC 12 byte ECC per 2048 Byte data */
+#define NAND_ECC_HW12_2048 7
+
/*
+ * Constants for Hardware ECC
+*/
+/* Reset Hardware ECC for read */
+#define NAND_ECC_READ 0
+/* Reset Hardware ECC for write */
+#define NAND_ECC_WRITE 1
+/* Enable Hardware ECC before syndrom is read back from flash */
+#define NAND_ECC_READSYN 2
+
+/* Option constants for bizarre disfunctionality and real
+* features
+*/
+/* Chip can not auto increment pages */
+#define NAND_NO_AUTOINCR 0x00000001
+/* Buswitdh is 16 bit */
+#define NAND_BUSWIDTH_16 0x00000002
+/* Device supports partial programming without padding */
+#define NAND_NO_PADDING 0x00000004
+/* Chip has cache program function */
+#define NAND_CACHEPRG 0x00000008
+/* Chip has copy back function */
+#define NAND_COPYBACK 0x00000010
+/* AND Chip which has 4 banks and a confusing page / block
+ * assignment. See Renesas datasheet for further information */
+#define NAND_IS_AND 0x00000020
+/* Chip has a array of 4 pages which can be read without
+ * additional ready /busy waits */
+#define NAND_4PAGE_ARRAY 0x00000040
+
+/* Options valid for Samsung large page devices */
+#define NAND_SAMSUNG_LP_OPTIONS \
+ (NAND_NO_PADDING | NAND_CACHEPRG | NAND_COPYBACK)
+
+/* Macros to identify the above */
+#define NAND_CANAUTOINCR(chip) (!(chip->options & NAND_NO_AUTOINCR))
+#define NAND_MUST_PAD(chip) (!(chip->options & NAND_NO_PADDING))
+#define NAND_HAS_CACHEPROG(chip) ((chip->options & NAND_CACHEPRG))
+#define NAND_HAS_COPYBACK(chip) ((chip->options & NAND_COPYBACK))
+
+/* Mask to zero out the chip options, which come from the id table */
+#define NAND_CHIPOPTIONS_MSK (0x0000ffff & ~NAND_NO_AUTOINCR)
+
+/* Non chip related options */
+/* Use a flash based bad block table. This option is passed to the
+ * default bad block table function. */
+#define NAND_USE_FLASH_BBT 0x00010000
+/* The hw ecc generator provides a syndrome instead a ecc value on read
+ * This can only work if we have the ecc bytes directly behind the
+ * data bytes. Applies for DOC and AG-AND Renesas HW Reed Solomon generators */
+#define NAND_HWECC_SYNDROME 0x00020000
+
+
+/* Options set by nand scan */
+/* Nand scan has allocated oob_buf */
+#define NAND_OOBBUF_ALLOC 0x40000000
+/* Nand scan has allocated data_buf */
+#define NAND_DATABUF_ALLOC 0x80000000
+
+
+/*
+ * nand_state_t - chip states
* Enumeration for NAND flash chip state
*/
typedef enum {
@@ -58,71 +208,138 @@
FL_READING,
FL_WRITING,
FL_ERASING,
- FL_SYNCING
+ FL_SYNCING,
+ FL_CACHEDPRG,
} nand_state_t;
+/* Keep gcc happy */
+struct nand_chip;
-/*
- * NAND Private Flash Chip Data
- *
- * Structure overview:
- *
- * IO_ADDR - address to access the 8 I/O lines of the flash device
- *
- * hwcontrol - hardwarespecific function for accesing control-lines
- *
- * dev_ready - hardwarespecific function for accesing device ready/busy line
- *
- * chip_lock - spinlock used to protect access to this structure
- *
- * wq - wait queue to sleep on if a NAND operation is in progress
- *
- * state - give the current state of the NAND device
- *
- * page_shift - number of address bits in a page (column address bits)
- *
- * data_buf - data buffer passed to/from MTD user modules
- *
- * data_cache - data cache for redundant page access and shadow for
- * ECC failure
- *
- * ecc_code_buf - used only for holding calculated or read ECCs for
- * a page read or written when ECC is in use
- *
- * reserved - padding to make structure fall on word boundary if
- * when ECC is in use
+#if 0
+/**
+ * struct nand_hw_control - Control structure for hardware controller (e.g ECC generator) shared among independend devices
+ * @lock: protection lock
+ * @active: the mtd device which holds the controller currently
*/
-struct Nand {
- char floor, chip;
- unsigned long curadr;
- unsigned char curmode;
- /* Also some erase/write/pipeline info when we get that far */
+struct nand_hw_control {
+ spinlock_t lock;
+ struct nand_chip *active;
};
+#endif
+/**
+ * struct nand_chip - NAND Private Flash Chip Data
+ * @IO_ADDR_R: [BOARDSPECIFIC] address to read the 8 I/O lines of the flash device
+ * @IO_ADDR_W: [BOARDSPECIFIC] address to write the 8 I/O lines of the flash device
+ * @read_byte: [REPLACEABLE] read one byte from the chip
+ * @write_byte: [REPLACEABLE] write one byte to the chip
+ * @read_word: [REPLACEABLE] read one word from the chip
+ * @write_word: [REPLACEABLE] write one word to the chip
+ * @write_buf: [REPLACEABLE] write data from the buffer to the chip
+ * @read_buf: [REPLACEABLE] read data from the chip into the buffer
+ * @verify_buf: [REPLACEABLE] verify buffer contents against the chip data
+ * @select_chip: [REPLACEABLE] select chip nr
+ * @block_bad: [REPLACEABLE] check, if the block is bad
+ * @block_markbad: [REPLACEABLE] mark the block bad
+ * @hwcontrol: [BOARDSPECIFIC] hardwarespecific function for accesing control-lines
+ * @dev_ready: [BOARDSPECIFIC] hardwarespecific function for accesing device ready/busy line
+ * If set to NULL no access to ready/busy is available and the ready/busy information
+ * is read from the chip status register
+ * @cmdfunc: [REPLACEABLE] hardwarespecific function for writing commands to the chip
+ * @waitfunc: [REPLACEABLE] hardwarespecific function for wait on ready
+ * @calculate_ecc: [REPLACEABLE] function for ecc calculation or readback from ecc hardware
+ * @correct_data: [REPLACEABLE] function for ecc correction, matching to ecc generator (sw/hw)
+ * @enable_hwecc: [BOARDSPECIFIC] function to enable (reset) hardware ecc generator. Must only
+ * be provided if a hardware ECC is available
+ * @erase_cmd: [INTERN] erase command write function, selectable due to AND support
+ * @scan_bbt: [REPLACEABLE] function to scan bad block table
+ * @eccmode: [BOARDSPECIFIC] mode of ecc, see defines
+ * @eccsize: [INTERN] databytes used per ecc-calculation
+ * @eccbytes: [INTERN] number of ecc bytes per ecc-calculation step
+ * @eccsteps: [INTERN] number of ecc calculation steps per page
+ * @chip_delay: [BOARDSPECIFIC] chip dependent delay for transfering data from array to read regs (tR)
+ * @chip_lock: [INTERN] spinlock used to protect access to this structure and the chip
+ * @wq: [INTERN] wait queue to sleep on if a NAND operation is in progress
+ * @state: [INTERN] the current state of the NAND device
+ * @page_shift: [INTERN] number of address bits in a page (column address bits)
+ * @phys_erase_shift: [INTERN] number of address bits in a physical eraseblock
+ * @bbt_erase_shift: [INTERN] number of address bits in a bbt entry
+ * @chip_shift: [INTERN] number of address bits in one chip
+ * @data_buf: [INTERN] internal buffer for one page + oob
+ * @oob_buf: [INTERN] oob buffer for one eraseblock
+ * @oobdirty: [INTERN] indicates that oob_buf must be reinitialized
+ * @data_poi: [INTERN] pointer to a data buffer
+ * @options: [BOARDSPECIFIC] various chip options. They can partly be set to inform nand_scan about
+ * special functionality. See the defines for further explanation
+ * @badblockpos: [INTERN] position of the bad block marker in the oob area
+ * @numchips: [INTERN] number of physical chips
+ * @chipsize: [INTERN] the size of one chip for multichip arrays
+ * @pagemask: [INTERN] page number mask = number of (pages / chip) - 1
+ * @pagebuf: [INTERN] holds the pagenumber which is currently in data_buf
+ * @autooob: [REPLACEABLE] the default (auto)placement scheme
+ * @bbt: [INTERN] bad block table pointer
+ * @bbt_td: [REPLACEABLE] bad block table descriptor for flash lookup
+ * @bbt_md: [REPLACEABLE] bad block table mirror descriptor
+ * @badblock_pattern: [REPLACEABLE] bad block scan pattern used for initial bad block scan
+ * @controller: [OPTIONAL] a pointer to a hardware controller structure which is shared among multiple independend devices
+ * @priv: [OPTIONAL] pointer to private chip date
+ */
+
struct nand_chip {
+ void __iomem *IO_ADDR_R;
+ void __iomem *IO_ADDR_W;
+
+ u_char (*read_byte)(struct mtd_info *mtd);
+ void (*write_byte)(struct mtd_info *mtd, u_char byte);
+ u16 (*read_word)(struct mtd_info *mtd);
+ void (*write_word)(struct mtd_info *mtd, u16 word);
+
+ void (*write_buf)(struct mtd_info *mtd, const u_char *buf, int len);
+ void (*read_buf)(struct mtd_info *mtd, u_char *buf, int len);
+ int (*verify_buf)(struct mtd_info *mtd, const u_char *buf, int len);
+ void (*select_chip)(struct mtd_info *mtd, int chip);
+ int (*block_bad)(struct mtd_info *mtd, loff_t ofs, int getchip);
+ int (*block_markbad)(struct mtd_info *mtd, loff_t ofs);
+ void (*hwcontrol)(struct mtd_info *mtd, int cmd);
+ int (*dev_ready)(struct mtd_info *mtd);
+ void (*cmdfunc)(struct mtd_info *mtd, unsigned command, int column, int page_addr);
+ int (*waitfunc)(struct mtd_info *mtd, struct nand_chip *this, int state);
+ int (*calculate_ecc)(struct mtd_info *mtd, const u_char *dat, u_char *ecc_code);
+ int (*correct_data)(struct mtd_info *mtd, u_char *dat, u_char *read_ecc, u_char *calc_ecc);
+ void (*enable_hwecc)(struct mtd_info *mtd, int mode);
+ void (*erase_cmd)(struct mtd_info *mtd, int page);
+ int (*scan_bbt)(struct mtd_info *mtd);
+ int eccmode;
+ int eccsize;
+ int eccbytes;
+ int eccsteps;
+ int chip_delay;
+#if 0
+ spinlock_t chip_lock;
+ wait_queue_head_t wq;
+ nand_state_t state;
+#endif
int page_shift;
+ int phys_erase_shift;
+ int bbt_erase_shift;
+ int chip_shift;
u_char *data_buf;
- u_char *data_cache;
- int cache_page;
- u_char ecc_code_buf[6];
- u_char reserved[2];
- char ChipID; /* Type of DiskOnChip */
- struct Nand *chips;
- int chipshift;
- char* chips_name;
- unsigned long erasesize;
- unsigned long mfr; /* Flash IDs - only one type of flash per device */
- unsigned long id;
- char* name;
- int numchips;
- char page256;
- char pageadrlen;
- unsigned long IO_ADDR; /* address to access the 8 I/O lines to the flash device */
- unsigned long totlen;
- uint oobblock; /* Size of OOB blocks (e.g. 512) */
- uint oobsize; /* Amount of OOB data per block (e.g. 16) */
- uint eccsize;
- int bus16;
+ u_char *oob_buf;
+ int oobdirty;
+ u_char *data_poi;
+ unsigned int options;
+ int badblockpos;
+ int numchips;
+ unsigned long chipsize;
+ int pagemask;
+ int pagebuf;
+ struct nand_oobinfo *autooob;
+ uint8_t *bbt;
+ struct nand_bbt_descr *bbt_td;
+ struct nand_bbt_descr *bbt_md;
+ struct nand_bbt_descr *badblock_pattern;
+ struct nand_hw_control *controller;
+ void *priv;
};
/*
@@ -130,71 +347,125 @@
*/
#define NAND_MFR_TOSHIBA 0x98
#define NAND_MFR_SAMSUNG 0xec
+#define NAND_MFR_FUJITSU 0x04
+#define NAND_MFR_NATIONAL 0x8f
+#define NAND_MFR_RENESAS 0x07
+#define NAND_MFR_STMICRO 0x20
-/*
- * NAND Flash Device ID Structure
+/**
+ * struct nand_flash_dev - NAND Flash Device ID Structure
*
- * Structure overview:
- *
- * name - Complete name of device
- *
- * manufacture_id - manufacturer ID code of device.
- *
- * model_id - model ID code of device.
- *
- * chipshift - total number of address bits for the device which
- * is used to calculate address offsets and the total
- * number of bytes the device is capable of.
- *
- * page256 - denotes if flash device has 256 byte pages or not.
- *
- * pageadrlen - number of bytes minus one needed to hold the
- * complete address into the flash array. Keep in
- * mind that when a read or write is done to a
- * specific address, the address is input serially
- * 8 bits at a time. This structure member is used
- * by the read/write routines as a loop index for
- * shifting the address out 8 bits at a time.
- *
- * erasesize - size of an erase block in the flash device.
+ * @name: Identify the device type
+ * @id: device ID code
+ * @pagesize: Pagesize in bytes. Either 256 or 512 or 0
+ * If the pagesize is 0, then the real pagesize
+ * and the eraseize are determined from the
+ * extended id bytes in the chip
+ * @erasesize: Size of an erase block in the flash device.
+ * @chipsize: Total chipsize in Mega Bytes
+ * @options: Bitfield to store chip relevant options
*/
struct nand_flash_dev {
- char * name;
- int manufacture_id;
- int model_id;
- int chipshift;
- char page256;
- char pageadrlen;
+ char *name;
+ int id;
+ unsigned long pagesize;
+ unsigned long chipsize;
unsigned long erasesize;
- int bus16;
+ unsigned long options;
};
+/**
+ * struct nand_manufacturers - NAND Flash Manufacturer ID Structure
+ * @name: Manufacturer name
+ * @id: manufacturer ID code of device.
+*/
+struct nand_manufacturers {
+ int id;
+ char * name;
+};
+
+extern struct nand_flash_dev nand_flash_ids[];
+extern struct nand_manufacturers nand_manuf_ids[];
+
+/**
+ * struct nand_bbt_descr - bad block table descriptor
+ * @options: options for this descriptor
+ * @pages: the page(s) where we find the bbt, used with option BBT_ABSPAGE
+ * when bbt is searched, then we store the found bbts pages here.
+ * Its an array and supports up to 8 chips now
+ * @offs: offset of the pattern in the oob area of the page
+ * @veroffs: offset of the bbt version counter in the oob are of the page
+ * @version: version read from the bbt page during scan
+ * @len: length of the pattern, if 0 no pattern check is performed
+ * @maxblocks: maximum number of blocks to search for a bbt. This number of
+ * blocks is reserved at the end of the device where the tables are
+ * written.
+ * @reserved_block_code: if non-0, this pattern denotes a reserved (rather than
+ * bad) block in the stored bbt
+ * @pattern: pattern to identify bad block table or factory marked good /
+ * bad blocks, can be NULL, if len = 0
+ *
+ * Descriptor for the bad block table marker and the descriptor for the
+ * pattern which identifies good and bad blocks. The assumption is made
+ * that the pattern and the version count are always located in the oob area
+ * of the first block.
+ */
+struct nand_bbt_descr {
+ int options;
+ int pages[NAND_MAX_CHIPS];
+ int offs;
+ int veroffs;
+ uint8_t version[NAND_MAX_CHIPS];
+ int len;
+ int maxblocks;
+ int reserved_block_code;
+ uint8_t *pattern;
+};
+
+/* Options for the bad block table descriptors */
+
+/* The number of bits used per block in the bbt on the device */
+#define NAND_BBT_NRBITS_MSK 0x0000000F
+#define NAND_BBT_1BIT 0x00000001
+#define NAND_BBT_2BIT 0x00000002
+#define NAND_BBT_4BIT 0x00000004
+#define NAND_BBT_8BIT 0x00000008
+/* The bad block table is in the last good block of the device */
+#define NAND_BBT_LASTBLOCK 0x00000010
+/* The bbt is at the given page, else we must scan for the bbt */
+#define NAND_BBT_ABSPAGE 0x00000020
+/* The bbt is at the given page, else we must scan for the bbt */
+#define NAND_BBT_SEARCH 0x00000040
+/* bbt is stored per chip on multichip devices */
+#define NAND_BBT_PERCHIP 0x00000080
+/* bbt has a version counter at offset veroffs */
+#define NAND_BBT_VERSION 0x00000100
+/* Create a bbt if none axists */
+#define NAND_BBT_CREATE 0x00000200
+/* Search good / bad pattern through all pages of a block */
+#define NAND_BBT_SCANALLPAGES 0x00000400
+/* Scan block empty during good / bad block scan */
+#define NAND_BBT_SCANEMPTY 0x00000800
+/* Write bbt if neccecary */
+#define NAND_BBT_WRITE 0x00001000
+/* Read and write back block contents when writing bbt */
+#define NAND_BBT_SAVECONTENT 0x00002000
+/* Search good / bad pattern on the first and the second page */
+#define NAND_BBT_SCAN2NDPAGE 0x00004000
+
+/* The maximum number of blocks to scan for a bbt */
+#define NAND_BBT_SCAN_MAXBLOCKS 4
+
+extern int nand_scan_bbt (struct mtd_info *mtd, struct nand_bbt_descr *bd);
+extern int nand_update_bbt (struct mtd_info *mtd, loff_t offs);
+extern int nand_default_bbt (struct mtd_info *mtd);
+extern int nand_isbad_bbt (struct mtd_info *mtd, loff_t offs, int allowbbt);
+extern int nand_erase_nand (struct mtd_info *mtd, struct erase_info *instr, int allowbbt);
+
/*
* Constants for oob configuration
*/
-#define NAND_NOOB_ECCPOS0 0
-#define NAND_NOOB_ECCPOS1 1
-#define NAND_NOOB_ECCPOS2 2
-#define NAND_NOOB_ECCPOS3 3
-#define NAND_NOOB_ECCPOS4 6
-#define NAND_NOOB_ECCPOS5 7
-#define NAND_NOOB_BADBPOS -1
-#define NAND_NOOB_ECCVPOS -1
-
-#define NAND_JFFS2_OOB_ECCPOS0 0
-#define NAND_JFFS2_OOB_ECCPOS1 1
-#define NAND_JFFS2_OOB_ECCPOS2 2
-#define NAND_JFFS2_OOB_ECCPOS3 3
-#define NAND_JFFS2_OOB_ECCPOS4 6
-#define NAND_JFFS2_OOB_ECCPOS5 7
-#define NAND_JFFS2_OOB_BADBPOS 5
-#define NAND_JFFS2_OOB_ECCVPOS 4
-
-#define NAND_JFFS2_OOB8_FSDAPOS 6
-#define NAND_JFFS2_OOB16_FSDAPOS 8
-#define NAND_JFFS2_OOB8_FSDALEN 2
-#define NAND_JFFS2_OOB16_FSDALEN 8
-
-unsigned long nand_probe(unsigned long physadr);
+#define NAND_SMALL_BADBLOCK_POS 5
+#define NAND_LARGE_BADBLOCK_POS 0
#endif /* __LINUX_MTD_NAND_H */
diff --git a/include/linux/mtd/nand_ecc.h b/include/linux/mtd/nand_ecc.h
new file mode 100644
index 0000000..12c5bc3
--- /dev/null
+++ b/include/linux/mtd/nand_ecc.h
@@ -0,0 +1,30 @@
+/*
+ * drivers/mtd/nand_ecc.h
+ *
+ * Copyright (C) 2000 Steven J. Hill (sjhill@realitydiluted.com)
+ *
+ * $Id: nand_ecc.h,v 1.4 2004/06/17 02:35:02 dbrown Exp $
+ *
+ * This program is free software; you can redistribute it and/or modify
+ * it under the terms of the GNU General Public License version 2 as
+ * published by the Free Software Foundation.
+ *
+ * This file is the header for the ECC algorithm.
+ */
+
+#ifndef __MTD_NAND_ECC_H__
+#define __MTD_NAND_ECC_H__
+
+struct mtd_info;
+
+/*
+ * Calculate 3 byte ECC code for 256 byte block
+ */
+int nand_calculate_ecc(struct mtd_info *mtd, const u_char *dat, u_char *ecc_code);
+
+/*
+ * Detect and correct a 1 bit error for 256 byte block
+ */
+int nand_correct_data(struct mtd_info *mtd, u_char *dat, u_char *read_ecc, u_char *calc_ecc);
+
+#endif /* __MTD_NAND_ECC_H__ */
diff --git a/include/linux/mtd/nand_ids.h b/include/linux/mtd/nand_ids.h
index a3d0363..75c305b 100644
--- a/include/linux/mtd/nand_ids.h
+++ b/include/linux/mtd/nand_ids.h
@@ -49,6 +49,7 @@
{"Samsung KM29W16000", NAND_MFR_SAMSUNG, 0xea, 21, 1, 2, 0x1000, 0},
{"Samsung K9F5616Q0C", NAND_MFR_SAMSUNG, 0x45, 25, 0, 2, 0x4000, 1},
{"Samsung K9K1216Q0C", NAND_MFR_SAMSUNG, 0x46, 26, 0, 3, 0x4000, 1},
+ {"Samsung K9F1G08U0M", NAND_MFR_SAMSUNG, 0xf1, 27, 0, 2, 0, 0},
{NULL,}
};