Rewrite of NAND code based on what is in 2.6.12 Linux kernel
Patch by Ladislav Michl, 29 Jun 2005
diff --git a/include/linux/mtd/mtd-abi.h b/include/linux/mtd/mtd-abi.h
new file mode 100644
index 0000000..afe96b5
--- /dev/null
+++ b/include/linux/mtd/mtd-abi.h
@@ -0,0 +1,99 @@
+/*
+ * $Id: mtd-abi.h,v 1.7 2004/11/23 15:37:32 gleixner Exp $
+ *
+ * Portions of MTD ABI definition which are shared by kernel and user space
+ */
+
+#ifndef __MTD_ABI_H__
+#define __MTD_ABI_H__
+
+struct erase_info_user {
+ uint32_t start;
+ uint32_t length;
+};
+
+struct mtd_oob_buf {
+ uint32_t start;
+ uint32_t length;
+ unsigned char *ptr;
+};
+
+#define MTD_ABSENT 0
+#define MTD_RAM 1
+#define MTD_ROM 2
+#define MTD_NORFLASH 3
+#define MTD_NANDFLASH 4
+#define MTD_PEROM 5
+#define MTD_OTHER 14
+#define MTD_UNKNOWN 15
+
+#define MTD_CLEAR_BITS 1 // Bits can be cleared (flash)
+#define MTD_SET_BITS 2 // Bits can be set
+#define MTD_ERASEABLE 4 // Has an erase function
+#define MTD_WRITEB_WRITEABLE 8 // Direct IO is possible
+#define MTD_VOLATILE 16 // Set for RAMs
+#define MTD_XIP 32 // eXecute-In-Place possible
+#define MTD_OOB 64 // Out-of-band data (NAND flash)
+#define MTD_ECC 128 // Device capable of automatic ECC
+#define MTD_NO_VIRTBLOCKS 256 // Virtual blocks not allowed
+
+// Some common devices / combinations of capabilities
+#define MTD_CAP_ROM 0
+#define MTD_CAP_RAM (MTD_CLEAR_BITS|MTD_SET_BITS|MTD_WRITEB_WRITEABLE)
+#define MTD_CAP_NORFLASH (MTD_CLEAR_BITS|MTD_ERASEABLE)
+#define MTD_CAP_NANDFLASH (MTD_CLEAR_BITS|MTD_ERASEABLE|MTD_OOB)
+#define MTD_WRITEABLE (MTD_CLEAR_BITS|MTD_SET_BITS)
+
+
+// Types of automatic ECC/Checksum available
+#define MTD_ECC_NONE 0 // No automatic ECC available
+#define MTD_ECC_RS_DiskOnChip 1 // Automatic ECC on DiskOnChip
+#define MTD_ECC_SW 2 // SW ECC for Toshiba & Samsung devices
+
+/* ECC byte placement */
+#define MTD_NANDECC_OFF 0 // Switch off ECC (Not recommended)
+#define MTD_NANDECC_PLACE 1 // Use the given placement in the structure (YAFFS1 legacy mode)
+#define MTD_NANDECC_AUTOPLACE 2 // Use the default placement scheme
+#define MTD_NANDECC_PLACEONLY 3 // Use the given placement in the structure (Do not store ecc result on read)
+#define MTD_NANDECC_AUTOPL_USR 4 // Use the given autoplacement scheme rather than using the default
+
+struct mtd_info_user {
+ uint8_t type;
+ uint32_t flags;
+ uint32_t size; // Total size of the MTD
+ uint32_t erasesize;
+ uint32_t oobblock; // Size of OOB blocks (e.g. 512)
+ uint32_t oobsize; // Amount of OOB data per block (e.g. 16)
+ uint32_t ecctype;
+ uint32_t eccsize;
+};
+
+struct region_info_user {
+ uint32_t offset; /* At which this region starts,
+ * from the beginning of the MTD */
+ uint32_t erasesize; /* For this region */
+ uint32_t numblocks; /* Number of blocks in this region */
+ uint32_t regionindex;
+};
+
+#define MEMGETINFO _IOR('M', 1, struct mtd_info_user)
+#define MEMERASE _IOW('M', 2, struct erase_info_user)
+#define MEMWRITEOOB _IOWR('M', 3, struct mtd_oob_buf)
+#define MEMREADOOB _IOWR('M', 4, struct mtd_oob_buf)
+#define MEMLOCK _IOW('M', 5, struct erase_info_user)
+#define MEMUNLOCK _IOW('M', 6, struct erase_info_user)
+#define MEMGETREGIONCOUNT _IOR('M', 7, int)
+#define MEMGETREGIONINFO _IOWR('M', 8, struct region_info_user)
+#define MEMSETOOBSEL _IOW('M', 9, struct nand_oobinfo)
+#define MEMGETOOBSEL _IOR('M', 10, struct nand_oobinfo)
+#define MEMGETBADBLOCK _IOW('M', 11, loff_t)
+#define MEMSETBADBLOCK _IOW('M', 12, loff_t)
+
+struct nand_oobinfo {
+ uint32_t useecc;
+ uint32_t eccbytes;
+ uint32_t oobfree[8][2];
+ uint32_t eccpos[32];
+};
+
+#endif /* __MTD_ABI_H__ */