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Wolfgang Denk932394a2005-08-17 12:55:25 +02001/*
2 * $Id: mtd-abi.h,v 1.7 2004/11/23 15:37:32 gleixner Exp $
3 *
4 * Portions of MTD ABI definition which are shared by kernel and user space
5 */
6
7#ifndef __MTD_ABI_H__
8#define __MTD_ABI_H__
9
10struct erase_info_user {
11 uint32_t start;
12 uint32_t length;
13};
14
15struct mtd_oob_buf {
16 uint32_t start;
17 uint32_t length;
18 unsigned char *ptr;
19};
20
21#define MTD_ABSENT 0
22#define MTD_RAM 1
23#define MTD_ROM 2
24#define MTD_NORFLASH 3
25#define MTD_NANDFLASH 4
26#define MTD_PEROM 5
27#define MTD_OTHER 14
28#define MTD_UNKNOWN 15
29
30#define MTD_CLEAR_BITS 1 // Bits can be cleared (flash)
31#define MTD_SET_BITS 2 // Bits can be set
32#define MTD_ERASEABLE 4 // Has an erase function
33#define MTD_WRITEB_WRITEABLE 8 // Direct IO is possible
34#define MTD_VOLATILE 16 // Set for RAMs
35#define MTD_XIP 32 // eXecute-In-Place possible
36#define MTD_OOB 64 // Out-of-band data (NAND flash)
37#define MTD_ECC 128 // Device capable of automatic ECC
38#define MTD_NO_VIRTBLOCKS 256 // Virtual blocks not allowed
39
40// Some common devices / combinations of capabilities
41#define MTD_CAP_ROM 0
42#define MTD_CAP_RAM (MTD_CLEAR_BITS|MTD_SET_BITS|MTD_WRITEB_WRITEABLE)
43#define MTD_CAP_NORFLASH (MTD_CLEAR_BITS|MTD_ERASEABLE)
44#define MTD_CAP_NANDFLASH (MTD_CLEAR_BITS|MTD_ERASEABLE|MTD_OOB)
45#define MTD_WRITEABLE (MTD_CLEAR_BITS|MTD_SET_BITS)
46
47
48// Types of automatic ECC/Checksum available
49#define MTD_ECC_NONE 0 // No automatic ECC available
50#define MTD_ECC_RS_DiskOnChip 1 // Automatic ECC on DiskOnChip
51#define MTD_ECC_SW 2 // SW ECC for Toshiba & Samsung devices
52
53/* ECC byte placement */
54#define MTD_NANDECC_OFF 0 // Switch off ECC (Not recommended)
55#define MTD_NANDECC_PLACE 1 // Use the given placement in the structure (YAFFS1 legacy mode)
56#define MTD_NANDECC_AUTOPLACE 2 // Use the default placement scheme
57#define MTD_NANDECC_PLACEONLY 3 // Use the given placement in the structure (Do not store ecc result on read)
58#define MTD_NANDECC_AUTOPL_USR 4 // Use the given autoplacement scheme rather than using the default
59
60struct mtd_info_user {
61 uint8_t type;
62 uint32_t flags;
63 uint32_t size; // Total size of the MTD
64 uint32_t erasesize;
65 uint32_t oobblock; // Size of OOB blocks (e.g. 512)
66 uint32_t oobsize; // Amount of OOB data per block (e.g. 16)
67 uint32_t ecctype;
68 uint32_t eccsize;
69};
70
71struct region_info_user {
72 uint32_t offset; /* At which this region starts,
73 * from the beginning of the MTD */
74 uint32_t erasesize; /* For this region */
75 uint32_t numblocks; /* Number of blocks in this region */
76 uint32_t regionindex;
77};
78
79#define MEMGETINFO _IOR('M', 1, struct mtd_info_user)
80#define MEMERASE _IOW('M', 2, struct erase_info_user)
81#define MEMWRITEOOB _IOWR('M', 3, struct mtd_oob_buf)
82#define MEMREADOOB _IOWR('M', 4, struct mtd_oob_buf)
83#define MEMLOCK _IOW('M', 5, struct erase_info_user)
84#define MEMUNLOCK _IOW('M', 6, struct erase_info_user)
85#define MEMGETREGIONCOUNT _IOR('M', 7, int)
86#define MEMGETREGIONINFO _IOWR('M', 8, struct region_info_user)
87#define MEMSETOOBSEL _IOW('M', 9, struct nand_oobinfo)
88#define MEMGETOOBSEL _IOR('M', 10, struct nand_oobinfo)
89#define MEMGETBADBLOCK _IOW('M', 11, loff_t)
90#define MEMSETBADBLOCK _IOW('M', 12, loff_t)
91
92struct nand_oobinfo {
93 uint32_t useecc;
94 uint32_t eccbytes;
95 uint32_t oobfree[8][2];
96 uint32_t eccpos[32];
97};
98
99#endif /* __MTD_ABI_H__ */